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Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology
- Authors
- Byeon, Kyeong-Jae; Hong, Eun-Ju; Park, Hyoungwon; Yoon, Kyung-Min; Song, Hyun Don; Lee, Jin Wook; Kim, Sun-Kyung; Cho, Hyun Kyong; Kwon, Ho Ki; Lee, Heon
- Issue Date
- 4-3월-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.25, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 25
- Number
- 3
- ISSN
- 0268-1242
- Abstract
- A vertical light-emitting diode (LED) with a chip size of 500 x 500 mu m(2) was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.
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