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Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film
- Authors
- Son, Hyunji; Chung, Sunjae; Yea, Sun-young; Kim, Shinhee; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 1-3월-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- ferromagnetic materials; free energy; gallium arsenide; gallium compounds; Hall effect; magnetic anisotropy; magnetic semiconductors
- Citation
- APPLIED PHYSICS LETTERS, v.96, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 96
- Number
- 9
- ISSN
- 0003-6951
- Abstract
- The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.
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