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Defect levels and thermomigration of Te precipitates in CdZnTe:Pb
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, K. H. | - |
| dc.contributor.author | Gul, R. | - |
| dc.contributor.author | Carcelen, V. | - |
| dc.contributor.author | Bolotinkov, A. E. | - |
| dc.contributor.author | Carmarda, G. S. | - |
| dc.contributor.author | Yang, G. | - |
| dc.contributor.author | Hossain, A. | - |
| dc.contributor.author | Cui, Y. | - |
| dc.contributor.author | James, R. B. | - |
| dc.contributor.author | Hong, J. | - |
| dc.contributor.author | Kim, S. U. | - |
| dc.date.accessioned | 2021-09-08T04:38:29Z | - |
| dc.date.available | 2021-09-08T04:38:29Z | - |
| dc.date.created | 2021-06-11 | - |
| dc.date.issued | 2010-03-01 | - |
| dc.identifier.issn | 0022-0248 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/116832 | - |
| dc.description.abstract | Semi-insulating Cd(0.9)Zn(0.1)Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 degrees C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a (137)Cs radioactive source, gave an energy resolution of 2.5%. (C) 2009 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.subject | CDTE | - |
| dc.subject | DETECTORS | - |
| dc.subject | IRRADIATION | - |
| dc.subject | CRYSTALS | - |
| dc.title | Defect levels and thermomigration of Te precipitates in CdZnTe:Pb | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, K. H. | - |
| dc.contributor.affiliatedAuthor | Hong, J. | - |
| dc.identifier.doi | 10.1016/j.jcrysgro.2009.11.069 | - |
| dc.identifier.scopusid | 2-s2.0-76449094030 | - |
| dc.identifier.wosid | 000276012400007 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.312, no.6, pp.781 - 784 | - |
| dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
| dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
| dc.citation.volume | 312 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 781 | - |
| dc.citation.endPage | 784 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Crystallography | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Crystallography | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | CDTE | - |
| dc.subject.keywordPlus | DETECTORS | - |
| dc.subject.keywordPlus | IRRADIATION | - |
| dc.subject.keywordPlus | CRYSTALS | - |
| dc.subject.keywordAuthor | Doping | - |
| dc.subject.keywordAuthor | Point defects | - |
| dc.subject.keywordAuthor | Bridgman technique | - |
| dc.subject.keywordAuthor | Cadmium compounds | - |
| dc.subject.keywordAuthor | Semiconducting II-VI materials | - |
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Related Researcher
- Hong, Jin Ki
- 과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)