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Defect levels and thermomigration of Te precipitates in CdZnTe:Pb
- Authors
- Kim, K. H.; Gul, R.; Carcelen, V.; Bolotinkov, A. E.; Carmarda, G. S.; Yang, G.; Hossain, A.; Cui, Y.; James, R. B.; Hong, J.; Kim, S. U.
- Issue Date
- 1-3월-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Doping; Point defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.6, pp.781 - 784
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 6
- Start Page
- 781
- End Page
- 784
- ISSN
- 0022-0248
- Abstract
- Semi-insulating Cd(0.9)Zn(0.1)Te:Pb crystals were grown by the vertical Bridgman method. Measurements of the current deep level transient spectroscopy (I-DLTS) revealed three trap levels in this material. Unlike other compensating dopants, CdZnTe:Pb samples do not show any Cd-vacancies defects and A-center levels. We subjected them to temperature-gradient annealing in Cd overpressure at 490-717 degrees C, and recorded an exponential relationship between the annihilation time of Te precipitates and the annealing temperature. The energy resolution of an annealed CdZnTe:Pb detector, tested using a (137)Cs radioactive source, gave an energy resolution of 2.5%. (C) 2009 Elsevier B.V. All rights reserved.
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Related Researcher
- Hong, Jin Ki
- 과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)