Optical characterizations of GaN nanorods fabricated by natural lithography
- Authors
- Kim, Byung-Jae; Bang, Joona; Kim, Sung Hyun; Kim, Jihyun
- Issue Date
- Mar-2010
- Publisher
- KOREAN INSTITUTE CHEMICAL ENGINEERS
- Keywords
- Natural Lithography; Quantum Effects; Nanorods; Band Filling
- Citation
- KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.27, no.2, pp.693 - 696
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF CHEMICAL ENGINEERING
- Volume
- 27
- Number
- 2
- Start Page
- 693
- End Page
- 696
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/116914
- DOI
- 10.1007/s11814-010-0107-9
- ISSN
- 0256-1115
- Abstract
- We fabricated GaN/Sapphire nanorods by nanosphere lithography (NSL) using SiO2 nanospheres. Arrays of SiO2 nanospheres were packed on GaN, followed by dry-etching via inductively Coupled plasma (ICP) etching. SiO2 nanospheres served as the etching mask under our etching conditions. Finally, a sapphire substrate under GaN was exposed by dry-etching. A significant blue shift was observed in the room temperature photoluminescence (PL) spectrum from GaN/Sapphire nanorods when the underlying Al2O3 was exposed. GaN nanorods were fabricated by simple and reproducible methods, where SiO2 nanospheres were successfully used as the etching mask. In addition, a blue-shift in PL by the band-filling effect was observed due to the GaN nanostructures.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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