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Optical characterizations of GaN nanorods fabricated by natural lithography

Authors
Kim, Byung-JaeBang, JoonaKim, Sung HyunKim, Jihyun
Issue Date
Mar-2010
Publisher
KOREAN INSTITUTE CHEMICAL ENGINEERS
Keywords
Natural Lithography; Quantum Effects; Nanorods; Band Filling
Citation
KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.27, no.2, pp.693 - 696
Indexed
SCIE
SCOPUS
KCI
Journal Title
KOREAN JOURNAL OF CHEMICAL ENGINEERING
Volume
27
Number
2
Start Page
693
End Page
696
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/116914
DOI
10.1007/s11814-010-0107-9
ISSN
0256-1115
Abstract
We fabricated GaN/Sapphire nanorods by nanosphere lithography (NSL) using SiO2 nanospheres. Arrays of SiO2 nanospheres were packed on GaN, followed by dry-etching via inductively Coupled plasma (ICP) etching. SiO2 nanospheres served as the etching mask under our etching conditions. Finally, a sapphire substrate under GaN was exposed by dry-etching. A significant blue shift was observed in the room temperature photoluminescence (PL) spectrum from GaN/Sapphire nanorods when the underlying Al2O3 was exposed. GaN nanorods were fabricated by simple and reproducible methods, where SiO2 nanospheres were successfully used as the etching mask. In addition, a blue-shift in PL by the band-filling effect was observed due to the GaN nanostructures.
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