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High Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices

Authors
Shin, Young ChulKim, Dong HoKim, Eun HongPark, Joong-MokHo, Kai-MingConstant, KristenChoe, Jong HoPark, Q. HanRyu, Han-YoulBaek, Jong HyeobJung, TakKim, Tae Geun
Issue Date
Jan-2010
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Finite-difference time domain method; light-emitting diode; light extraction efficiency; nitride-based semiconductor; photonic crystal
Citation
IEEE JOURNAL OF QUANTUM ELECTRONICS, v.46, no.1, pp.116 - 120
Indexed
SCIE
SCOPUS
Journal Title
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume
46
Number
1
Start Page
116
End Page
120
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/117195
DOI
10.1109/JQE.2009.2030150
ISSN
0018-9197
Abstract
We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 1.37 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.
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