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Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor
- Issue Date
- 1월-2010
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Enhancement mode; Fock-Darwin states; in-plane gates (IPGs); resonant tunneling
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.9, no.1, pp.123 - 127
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 9
- Number
- 1
- Start Page
- 123
- End Page
- 127
- ISSN
- 1536-125X
- Abstract
- We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E-1) and the first excited state (E-2) of the Fock-Darwin states.
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