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열처리를 통한 HgSe 나노입자 기반 박막 트랜지스터의 전기적 특성 향상Improved Electrical Characteristics of HgSe Nanoparticle-based Thin Film Transistors by Thermal Annealing
- Other Titles
- Improved Electrical Characteristics of HgSe Nanoparticle-based Thin Film Transistors by Thermal Annealing
- Issue Date
- 2010
- Publisher
- 한국전기전자학회
- Keywords
- nanoparticle; thin film transistor; HgSe; nanoparticle; thin film transistor; HgSe
- Citation
- 전기전자학회논문지, v.14, no.3, pp.194 - 198
- Indexed
- KCI
- Journal Title
- 전기전자학회논문지
- Volume
- 14
- Number
- 3
- Start Page
- 194
- End Page
- 198
- ISSN
- 1226-7244
- Abstract
- In this study, we fabricated the HgSe nanoparticle-based thin film transistors (TFTs) of back gate structure with PVA gate dielectric. The fabricated TFTs show the improved electrical characteristics in the mobility of 16 cm2/Vs and the on/off ratio of 104 after annealing process at 100 oC for 5 min. AFM images demonstrate that the decrease in surface roughness according to annealing process leads to the improvement of electrical characteristics. The change in drain current caused from the conditions of flexible substrate is investigated under 0.6% strain.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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