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Low Resistance CrB2/Ti/Al Ohmic Contacts to N-face n-GaN for High Power GaN-Based Vertical Light Emitting Diodes
- Authors
- Park, Seong-Han; Jeon, Joon-Woo; Lee, Sang Youl; Moon, Jihyung; Song, June-O; Seong, Tae-Yeon
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- aluminium; annealing; chromium compounds; electrical resistivity; gallium compounds; III-V semiconductors; light emitting diodes; ohmic contacts; secondary ion mass spectra; semiconductor-metal boundaries; titanium; wide band gap semiconductors; X-ray photoelectron spectra
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.10, pp.H333 - H335
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 10
- Start Page
- H333
- End Page
- H335
- ISSN
- 1099-0062
- Abstract
- We investigated the effect of a CrB2 interlayer on the electrical properties of Ti/Al contacts to N-face n-type GaN for high performance vertical light emitting diodes. Before annealing, both CrB2 (30 nm)/Ti (30 nm)/Al (200 nm) and Ti (30 nm)/Al (200 nm) contacts produce ohmic behaviors with a contact resistivity of 1.92 x 10(-4) and 1.99 x 10(-4) Omega cm(2), respectively. Unlike the Ti/Al contacts, however, the CrB2/Ti/Al contacts remain ohmic with a contact resistivity of 8.30 x 10(-4) Omega cm(2) even after annealing at 250 degrees C for 1 min in N-2 ambient. X-ray photoemission spectroscopy and secondary-ion mass spectrometry examinations are performed to describe the ohmic formation behavior. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3461136] All rights reserved.
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