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Low Resistance High Reflectance ITO/Al Ohmic Contacts to p-Type GaN Via SF6 Plasma Treatments
- Authors
- Lee, Wan Ho; Kim, Dong Ho; Chae, Dong Ju; Yang, Ji Won; Sim, Jae In; Sung, Yun Mo; Kim, Tae Geun
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.4, pp.H98 - H100
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 4
- Start Page
- H98
- End Page
- H100
- ISSN
- 1099-0062
- Abstract
- We demonstrate improved electrical and optical properties of indium tin oxide (ITO)/Al reflectors, via SF6 plasma treatments, for vertical-type GaN light emitting diodes. A 200 nm thick ITO film was deposited and annealed at 650 degrees C to obtain ohmic contacts with p-GaN, after which SF6 and O-2 plasma were applied on ITO before the Al deposition to effectively increase the work function of ITO and decrease the roughness of the ITO surface. The SF6 plasma-treated ITO/Al reflector showed the lowest specific contact resistance of 9.83 x 10(-4) Omega cm(2) and the highest reflectance of 91% at 460 nm, compared to as-deposited and O-2 plasma-treated ITO/Al reflectors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3290733] All rights reserved.
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