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Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene

Authors
Ko, G.Kim, H. -Y.Ren, F.Pearton, S. J.Kim, J.
Issue Date
2010
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.4, pp.K32 - K34
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
13
Number
4
Start Page
K32
End Page
K34
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118622
DOI
10.1149/1.3290777
ISSN
1099-0062
Abstract
Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2 X 10(15)/cm(2). The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including V(DS)-I(DS), V(G)-I(DS), and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3290777] All rights reserved.
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