Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer
- Authors
- Jeong, Hwan Hee; Lee, Sang Youl; Jeong, Young Kyu; Choi, Kwang Ki; Song, June-O; Lee, Yong-Hyun; Seong, Tae-Yeon
- Issue Date
- 2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.7, pp.H237 - H239
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 7
- Start Page
- H237
- End Page
- H239
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118649
- DOI
- 10.1149/1.3407625
- ISSN
- 1099-0062
- Abstract
- The light output characteristics of GaN-based vertical light emitting diodes (1 x 1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 mu m, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90 x 10(-7) to 3.05 x 10(-7) A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3407625] All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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