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BaTiO3 Doped Na0.5K0.5NbO3 Thin Films Deposited by Using Eclipse Shutter Enhanced Pulsed Laser Deposition Method
- Authors
- Choi, J. S.; Hwang, I. R.; Hong, S. H.; Oh, G. T.; Choi, J. A.; Jeon, S. H.; Kang, S. -O.; Yalishev, Vadim Sh; Park, B. H.; Choi, Chang-Hak; Ahn, Cheol-Woo; Nahm, Sahn; Ahn, Sang Jun
- Issue Date
- 12월-2009
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Eclipse Method; BTO-NKN; Lead-Free Piezoelectric; Thin Film; PLD
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.12, pp.7354 - 7358
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 9
- Number
- 12
- Start Page
- 7354
- End Page
- 7358
- ISSN
- 1533-4880
- Abstract
- We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTiO3 doped Na0.5K0.5NbO3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La0.5Sr0.5CoO3 (LSCO) bottom electrodes with LaAlO3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d(33) values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pm/V, respectively.
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