Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations
- Authors
- Jo, Yeong-Deuk; Koh, Jung-Hyuk; Ha, Jae-Geun; Kim, Ji-Hong; Cho, Dae-Hyung; Moon, Byung-Moo; Koo, Sang-Mo
- Issue Date
- Dec-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.12
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 12
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/118836
- DOI
- 10.1088/0268-1242/24/12/125005
- ISSN
- 0268-1242
- Abstract
- Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (C-p) in the substrate, when the interface charges (Q(f)) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Q(f)) have been found to increase by similar to 1.94 x 10(12) cm(-2) with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.
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