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Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

Authors
Yoo, TaeheeKhym, S.Yea, Sun-youngChung, SunjaeLee, SanghoonLiu, X.Furdyna, J. K.
Issue Date
16-11월-2009
Publisher
AMER INST PHYSICS
Keywords
gallium compounds; Hall effect; III-V semiconductors; iron; magnetisation; metallic thin films
Citation
APPLIED PHYSICS LETTERS, v.95, no.20
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
95
Number
20
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118918
DOI
10.1063/1.3266826
ISSN
0003-6951
Abstract
We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation.
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