Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates
DC Field | Value | Language |
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dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Koo, Jamin | - |
dc.contributor.author | Chung, Eun-Ae | - |
dc.contributor.author | Jeong, Dong-Young | - |
dc.contributor.author | Koo, Yong-Seo | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-08T11:33:57Z | - |
dc.date.available | 2021-09-08T11:33:57Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-11-11 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/118928 | - |
dc.description.abstract | A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p(+) drain and n(+) channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PERFORMANCE | - |
dc.subject | ELECTRONICS | - |
dc.subject | FET | - |
dc.subject | SIMULATION | - |
dc.subject | CMOS | - |
dc.title | Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1088/0957-4484/20/45/455201 | - |
dc.identifier.scopusid | 2-s2.0-70350639329 | - |
dc.identifier.wosid | 000270904600007 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.20, no.45 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 20 | - |
dc.citation.number | 45 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CMOS | - |
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