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Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

Authors
Lee, MyeongwonKoo, JaminChung, Eun-AeJeong, Dong-YoungKoo, Yong-SeoKim, Sangsig
Issue Date
11-11월-2009
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.20, no.45
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
20
Number
45
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/118928
DOI
10.1088/0957-4484/20/45/455201
ISSN
0957-4484
Abstract
A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p(+) drain and n(+) channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.
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