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Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET
- Authors
- Hong, Byoung Hak; Jung, Young Chai; Rieh, Jae Sung; Hwang, Sung Woo; Cho, Keun Hwi; Yeo, K. H.; Suk, S. D.; Yeoh, Y. Y.; Li, M.; Kim, Dong-Won; Park, Donggun; Oh, Kyung Seok; Lee, Won-Seong
- Issue Date
- 11월-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gate-all-around (GAA); silicon nanowire FET (SNWFET); single-acceptor atom; temperature dependence
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.8, no.6, pp.713 - 717
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 8
- Number
- 6
- Start Page
- 713
- End Page
- 717
- ISSN
- 1536-125X
- Abstract
- Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.
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