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Thin film silicon substrate formation using electrochemical anodic etching method
- Authors
- Kwon, J. -H.; Lee, S. -H.; Ju, B. -K.
- Issue Date
- 11월-2009
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Porous silicon; Electrochemical etching; Anodisation; Layer transfer
- Citation
- SURFACE ENGINEERING, v.25, no.8, pp.603 - 605
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE ENGINEERING
- Volume
- 25
- Number
- 8
- Start Page
- 603
- End Page
- 605
- ISSN
- 0267-0844
- Abstract
- The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26.5%) and high (86.3%) porosity layers were formed by ECA at 1.5 mA cm(-2) and 100 mA cm(-2) for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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