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High-Power Single-Mode 1.3-m InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures
- Authors
- Kim, Kyoung Chan; Jang, Dong-Kie; Lee, Jung Il; Kim, Tae Geun; Lee, Woo Won; Kim, Jeong Ho; Yang, Eun Jeong; Koo, Bon Jo; Han, Il Ki
- Issue Date
- 1-Oct-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- High-power; single-mode laser diodes (LDs); multiple quantum well (MQW); wide aperture
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.21, no.19, pp.1438 - 1440
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE PHOTONICS TECHNOLOGY LETTERS
- Volume
- 21
- Number
- 19
- Start Page
- 1438
- End Page
- 1440
- ISSN
- 1041-1135
- Abstract
- A wide-aperture ridge waveguide structure was applied to 1.3-m InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mu m-wide ridge top and a 1.5-mm-long uncoated cavity.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)