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High-Power Single-Mode 1.3-m InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

Authors
Kim, Kyoung ChanJang, Dong-KieLee, Jung IlKim, Tae GeunLee, Woo WonKim, Jeong HoYang, Eun JeongKoo, Bon JoHan, Il Ki
Issue Date
1-10월-2009
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
High-power; single-mode laser diodes (LDs); multiple quantum well (MQW); wide aperture
Citation
IEEE PHOTONICS TECHNOLOGY LETTERS, v.21, no.19, pp.1438 - 1440
Indexed
SCIE
SCOPUS
Journal Title
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume
21
Number
19
Start Page
1438
End Page
1440
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/119132
DOI
10.1109/LPT.2009.2028153
ISSN
1041-1135
Abstract
A wide-aperture ridge waveguide structure was applied to 1.3-m InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mu m-wide ridge top and a 1.5-mm-long uncoated cavity.
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