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Electrical Characteristics of Hybrid Nanoparticle-Nanowire Devices
- Issue Date
- Sep-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- FET logic devices; FET memory integrated circuits; memories; nanotechnology
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.8, no.5, pp.650 - 653
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 8
- Number
- 5
- Start Page
- 650
- End Page
- 653
- ISSN
- 1536-125X
- Abstract
- Gold nanoparticles synthesized by a colloidal method were deposited in an Al(2)O(3) dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al(2)O(3)-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al(2)O(3) tunneling oxide layer.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)