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Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system
- Authors
- Lee, Sang Youl; Choi, Kwang Ki; Jeong, Hwan-Hee; Choi, Hee Seok; Oh, Tchang-Hun; Song, June O.; Seong, Tae-Yeon
- Issue Date
- 9월-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 9
- ISSN
- 0268-1242
- Abstract
- We first report on the fabrication of 2 inch wafer-level GaN-based vertical light-emitting diodes (LEDs) by using a multi-functional bonding material system, which is composed of a thick Cu diffusion barrier and a bonding layer. The bonding material system superbly absorbs laser-induced stress and also effectively serves as a barrier to the indiffusion of Sn to the active region. Fully packaged vertical LEDs fabricated with indium tin oxide (ITO)/AgCu contact and the bonding material system give an operating voltage of 3.35 V at 350 mA. After over 1800 h, the operating voltages remain stable, and the reverse currents are in the range 3-8 x 10(-7) A at -5 V.
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