Effect of the N-2/(Ar+N-2) Flow Ratio on the Synthesis of Zirconium Nitride Thin Films by DC Reactive Sputtering
DC Field | Value | Language |
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dc.contributor.author | Kim, Dong Ho | - |
dc.contributor.author | Kim, Chul Min | - |
dc.contributor.author | Kim, Eun Hong | - |
dc.contributor.author | Shin, Young Chul | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Roh, Cheong Hyun | - |
dc.contributor.author | Hahn, Cheol-Koo | - |
dc.date.accessioned | 2021-09-08T13:58:41Z | - |
dc.date.available | 2021-09-08T13:58:41Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119406 | - |
dc.description.abstract | We investigate the effect of the N-2/(Ar+N-2) flow ratio (F(N-2)) On the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N-2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N-2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 mu Omega.cm to 1291.87 mu Omega.cm with increasing F(N-2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | GAN | - |
dc.subject | SUBSTRATE | - |
dc.subject | SILICON | - |
dc.title | Effect of the N-2/(Ar+N-2) Flow Ratio on the Synthesis of Zirconium Nitride Thin Films by DC Reactive Sputtering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.scopusid | 2-s2.0-84905090510 | - |
dc.identifier.wosid | 000269886300049 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1149 - 1152 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1149 | - |
dc.citation.endPage | 1152 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001497468 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | Zirconium nitride (ZrN) | - |
dc.subject.keywordAuthor | DC reactive sputtering | - |
dc.subject.keywordAuthor | Grain growth | - |
dc.subject.keywordAuthor | Stoichiometry | - |
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