Effect of the N-2/(Ar+N-2) Flow Ratio on the Synthesis of Zirconium Nitride Thin Films by DC Reactive Sputtering
- Authors
- Kim, Dong Ho; Kim, Chul Min; Kim, Eun Hong; Shin, Young Chul; Kim, Tae Geun; Roh, Cheong Hyun; Hahn, Cheol-Koo
- Issue Date
- 9월-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Zirconium nitride (ZrN); DC reactive sputtering; Grain growth; Stoichiometry
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1149 - 1152
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 3
- Start Page
- 1149
- End Page
- 1152
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119406
- ISSN
- 0374-4884
- Abstract
- We investigate the effect of the N-2/(Ar+N-2) flow ratio (F(N-2)) On the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N-2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N-2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 mu Omega.cm to 1291.87 mu Omega.cm with increasing F(N-2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.
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