High-breakdown-voltage InGaN/GaN MQW LED Achieved by Using a Varied-barrier-growth-temperature Method
DC Field | Value | Language |
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dc.contributor.author | Leem, Shi Jong | - |
dc.contributor.author | Shin, Young Chul | - |
dc.contributor.author | Kim, Eun Hong | - |
dc.contributor.author | Kim, Chul Min | - |
dc.contributor.author | Lee, Byoung Gyu | - |
dc.contributor.author | Lee, Wan Ho | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Moon, Youngboo | - |
dc.date.accessioned | 2021-09-08T14:16:33Z | - |
dc.date.available | 2021-09-08T14:16:33Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119463 | - |
dc.description.abstract | We report the effect of the barrier growth temperature of InGaN/GaN multi-quantum wells on the breakdown voltage of light emitting diodes. We adopted a two-step varied-barrier-growth temperature method to improve the structural and the electrical properties of the InGaN/GaN MQW layers. The depth of the V defect of InGaN/GaN MQW surfaces was decreased tip to 20 angstrom by using a GaN barrier layer grown at a high growth temperature of 1000 degrees C as compared to the conventional sample without varying the GaN barrier growth temperature. we found that the breakdown voltage increased to as high as about -25 V at a 10 mu A reverse current. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | MULTIPLE-QUANTUM WELLS | - |
dc.subject | GAN LAYERS | - |
dc.subject | GREEN | - |
dc.title | High-breakdown-voltage InGaN/GaN MQW LED Achieved by Using a Varied-barrier-growth-temperature Method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.scopusid | 2-s2.0-70350322702 | - |
dc.identifier.wosid | 000269886800005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1219 - 1222 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1219 | - |
dc.citation.endPage | 1222 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001497687 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | GAN LAYERS | - |
dc.subject.keywordPlus | GREEN | - |
dc.subject.keywordAuthor | InGaN/GaN MQWs | - |
dc.subject.keywordAuthor | Growth temperature | - |
dc.subject.keywordAuthor | Atomic force microscopy | - |
dc.subject.keywordAuthor | V defect | - |
dc.subject.keywordAuthor | Leakage current | - |
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