High-breakdown-voltage InGaN/GaN MQW LED Achieved by Using a Varied-barrier-growth-temperature Method
- Authors
- Leem, Shi Jong; Shin, Young Chul; Kim, Eun Hong; Kim, Chul Min; Lee, Byoung Gyu; Lee, Wan Ho; Kim, Tae Geun; Moon, Youngboo
- Issue Date
- 9월-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- InGaN/GaN MQWs; Growth temperature; Atomic force microscopy; V defect; Leakage current
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.3, pp.1219 - 1222
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 3
- Start Page
- 1219
- End Page
- 1222
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119463
- ISSN
- 0374-4884
- Abstract
- We report the effect of the barrier growth temperature of InGaN/GaN multi-quantum wells on the breakdown voltage of light emitting diodes. We adopted a two-step varied-barrier-growth temperature method to improve the structural and the electrical properties of the InGaN/GaN MQW layers. The depth of the V defect of InGaN/GaN MQW surfaces was decreased tip to 20 angstrom by using a GaN barrier layer grown at a high growth temperature of 1000 degrees C as compared to the conventional sample without varying the GaN barrier growth temperature. we found that the breakdown voltage increased to as high as about -25 V at a 10 mu A reverse current.
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