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Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
- Authors
- Hong, Eun-Ju; Byeon, Kyeong-Jae; Park, Hyoungwon; Hwang, Jaeyeon; Lee, Heon; Choi, Kyungwoo; Jung, Gun Young
- Issue Date
- 25-Jul-2009
- Publisher
- ELSEVIER
- Keywords
- Moth-eye structure; GaN; Photon extraction efficiency; Green LED; Photoluminescence; Nanoimprint lithography
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v.163, no.3, pp.170 - 173
- Indexed
- SCIE
SCOPUS
- Volume
- 163
- Number
- 3
- Start Page
- 170
- End Page
- 173
- ISSN
- 0921-5107
- Abstract
- Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure. (C) 2009 Elsevier B.V. All rights reserved.
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