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Phase change and electrical characteristics of Ge-Se-Te alloys
- Authors
- Lee, Eui-Bok; Ju, Byeong-Kwon; Kim, Yong-Tae
- Issue Date
- 7월-2009
- Publisher
- ELSEVIER
- Keywords
- Phase change materials; Ge-Se-Te alloys; Chalcogenide
- Citation
- MICROELECTRONIC ENGINEERING, v.86, no.7-9, pp.1950 - 1953
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 86
- Number
- 7-9
- Start Page
- 1950
- End Page
- 1953
- ISSN
- 0167-9317
- Abstract
- Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved.
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