Electrical characterization of Ge-Sb-Te phase change nano-pillars using conductive atomic force microscopy
- Authors
- Bae, Byeong-Ju; Hong, Sung-Hoon; Hwang, Seon-Yong; Hwang, Jae-Yeon; Yang, Ki-Yeon; Lee, Heon
- Issue Date
- 7월-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119792
- DOI
- 10.1088/0268-1242/24/7/075016
- ISSN
- 0268-1242
- Abstract
- The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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