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Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers
- Authors
- Cho, Ji Ung; Kim, Do Kyun; Tan, Reasmey P.; Isogami, Shinji; Tsunoda, Masakiyo; Takahashi, Migaku; Kim, Young Keun
- Issue Date
- 6월-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous; hybrid free layer; magnetic tunnel junction; NiFeSiB
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2364 - 2366
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 45
- Number
- 6
- Start Page
- 2364
- End Page
- 2366
- ISSN
- 0018-9464
- Abstract
- We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.
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