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Electrical Properties of Bi5Nb3O15 Thin Film Grown on TiN/SiO2/Si at Room Temperature for Metal-Insulator-Metal Capacitors
- Authors
- Cho, Kyung-Hoon; Seong, Tae-Geun; Choi, Joo-Young; Kim, Jin-Seong; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok-Jin; Kim, Jong-Hee
- Issue Date
- 6월-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bi5Nb3O15; high-k; metal-insulator-metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.614 - 616
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 30
- Number
- 6
- Start Page
- 614
- End Page
- 616
- ISSN
- 0741-3106
- Abstract
- Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 degrees C but not in films grown at room temperature and annealed at 350 degrees C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/mu m(2) and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm(2) at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V-2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/degrees C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.
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