Improved carrier-transport properties of passivated CdMnTe crystals
- Authors
- Kim, K. H.; Camarda, G. S.; Bolotnikov, A. E.; James, R. B.; Hong, Jinki; Kim, SunUng
- Issue Date
- 1-5월-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- CdMnTe
- Citation
- JOURNAL OF APPLIED PHYSICS, v.105, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 105
- Number
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120068
- DOI
- 10.1063/1.3121502
- ISSN
- 0021-8979
- Abstract
- By analyzing photoconductive decay curves, we compared the surface recombination velocities of semi-insulating CdMnTe:In crystals grown by the vertical Bridgman method with or without surface passivation. Sulfur passivation effectively prevents the formation of a conductive Te oxide layer on the CdMnTe surface and reduces the surface recombination velocities by about one third. We demonstrated, from IR observations of the distribution maps of Te precipitates, that their configuration affects the anomalous photoconductive decay curves and the gamma-ray spectrum in some areas of the CdMnTe crystal. Notably, not only the size but also the spatial configuration of the Te precipitates modulates the carrier-transport properties. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3121502]
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Collections - College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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