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Improved carrier-transport properties of passivated CdMnTe crystals

Authors
Kim, K. H.Camarda, G. S.Bolotnikov, A. E.James, R. B.Hong, JinkiKim, SunUng
Issue Date
1-5월-2009
Publisher
AMER INST PHYSICS
Keywords
CdMnTe
Citation
JOURNAL OF APPLIED PHYSICS, v.105, no.9
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
105
Number
9
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120068
DOI
10.1063/1.3121502
ISSN
0021-8979
Abstract
By analyzing photoconductive decay curves, we compared the surface recombination velocities of semi-insulating CdMnTe:In crystals grown by the vertical Bridgman method with or without surface passivation. Sulfur passivation effectively prevents the formation of a conductive Te oxide layer on the CdMnTe surface and reduces the surface recombination velocities by about one third. We demonstrated, from IR observations of the distribution maps of Te precipitates, that their configuration affects the anomalous photoconductive decay curves and the gamma-ray spectrum in some areas of the CdMnTe crystal. Notably, not only the size but also the spatial configuration of the Te precipitates modulates the carrier-transport properties. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3121502]
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