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ZnO Nanowire Field-Effect Transistors with Floating Gate Nodes of Au Nanoparticles

Authors
Yeom, DonghyukKang, JeongminYoon, ChangjoonPark, ByoungjunJeong, Dong-YoungKoh, Eui KwanKim, Sangsig
Issue Date
May-2009
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
ZnO; Nanowires; Au; Nanoparticles; Memory; FET
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.5, pp 3256 - 3260
Pages
5
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
9
Number
5
Start Page
3256
End Page
3260
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120187
DOI
10.1166/jnn.2009.020
ISSN
1533-4880
1533-4899
Abstract
The memory characteristics of top-gate single ZnO nanowire-based field-effect transistors (FETs) with floating gate nodes consisting of Au nanoparticles on top of the nanowire channels were investigated in this study. Au nanciparticles, synthesized by a thermal deposition of Au thin film and by a subsequent thermal annealing procedure, were embedded in between Al2O3 tunneling and control gate layers deposited on ZnO nanowire channels. For a representative single ZnO nanowire-based FET with floating gate nodes consisting of Au nanoparticles embedded between Al2O3 layers, its drain current versus gate voltage (I-DS-V-DS) characteristics for a double sweep in the gate voltage range from -4 to 4 V exhibit a clockwise hysteresis loop with a threshold voltage shift Of Delta V-th = 1.6 V, resulting from the tunneling of the charge carriers from the ZnO nanowire channel into the Au nanoparticles. In addition, the charge storage characteristic of threshold voltage shift with the elapsed time observed in this FET is also discussed in this paper.
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