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The Island-Gate Varactor-A High-Q MOS Varactor for Millimeter-Wave Applications
- Authors
- Oh, Yongho; Kim, Sooyeon; Lee, Seungyong; Rieh, Jae-Sung
- Issue Date
- Apr-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Millimeter-wave; Q-factor; varactors
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.4, pp.215 - 217
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 19
- Number
- 4
- Start Page
- 215
- End Page
- 217
- ISSN
- 1531-1309
- Abstract
- A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance R. over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.
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Related Researcher
- Rieh, Jae Sung
- College of Engineering (School of Electrical Engineering)