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The Island-Gate Varactor-A High-Q MOS Varactor for Millimeter-Wave Applications

Authors
Oh, YonghoKim, SooyeonLee, SeungyongRieh, Jae-Sung
Issue Date
Apr-2009
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Millimeter-wave; Q-factor; varactors
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.4, pp.215 - 217
Indexed
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
19
Number
4
Start Page
215
End Page
217
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120390
DOI
10.1109/LMWC.2009.2015499
ISSN
1531-1309
Abstract
A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance R. over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.
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