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A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Authors
Kwon, Jae-HongSeo, Jung-HoonShin, Sang-IlJu, Byeong-Kwon
Issue Date
21-Mar-2009
Publisher
IOP PUBLISHING LTD
Keywords
Oxide transistor; Zinc-oxide thin film transistor
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.6
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume
42
Number
6
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120410
DOI
10.1088/0022-3727/42/6/065105
ISSN
0022-3727
Abstract
This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly( styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm(2) V-1 s(-1), an on/off ratio of > 10(4), a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (VDS) is 20 V.
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