Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag
- Authors
- Yoon, Bongno; Sung, Man Young; Yeon, Sujin; Oh, Hyun S.; Kwon, Yoonjoo; Kim, Chuljin; Kim, Kyung-Ho
- Issue Date
- 15-3월-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- CMOS integrated circuits; ferroelectric capacitors; ferroelectric storage; radiofrequency identification; random-access storage; UHF integrated circuits
- Citation
- JOURNAL OF APPLIED PHYSICS, v.105, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 105
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120424
- DOI
- 10.1063/1.3055343
- ISSN
- 0021-8979
- Abstract
- With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification (RFID) protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times (T-pt) for each session (S0-S3, SL). In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around 500x500 mu m(2) and the measured power consumption is about 10 mu W.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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