Schottky-type polycrystalline CdZnTe X-ray detectors
- Authors
- Kim, KiHyun; Cho, ShinHang; Suh, JongHee; Won, JaeHo; Hong, JinKi; Kim, SunUng
- Issue Date
- 3월-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Polycrystalline; CdZnTe; X-ray detector; Schottky diode; Leakage current
- Citation
- CURRENT APPLIED PHYSICS, v.9, no.2, pp.306 - 310
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 9
- Number
- 2
- Start Page
- 306
- End Page
- 310
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120487
- DOI
- 10.1016/j.cap.2008.01.020
- ISSN
- 1567-1739
- Abstract
- The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 x 10(9) Omega cm are grown by thermal evaporation method. The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottky type was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystalline CdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current (14 nA/cm(2)) at 40 V due to its high barrier height (phi(b) = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystalline CdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applications as a flat panel X-ray detector. (C) 2008 Elsevier B.V. All rights reserved.
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- Appears in
Collections - College of Health Sciences > School of Health and Environmental Science > 1. Journal Articles
- College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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