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Contact barriers in a single ZnO nanowire device
- Authors
- Kim, Kanghyun; Kang, Haeyong; Kim, Hyeyoung; Lee, Jong Soo; Kim, Sangtae; Kang, Woun; Kim, Gyu-Tae
- Issue Date
- 2월-2009
- Publisher
- SPRINGER HEIDELBERG
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.94, no.2, pp.253 - 256
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 94
- Number
- 2
- Start Page
- 253
- End Page
- 256
- ISSN
- 0947-8396
- Abstract
- The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be similar to 30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T < 100 K.
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