Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO
- Authors
- Kim, Sang-Ho; Hwang, Dea-Kue; Park, Seong-Ju; Seong, Tae-Yeon
- Issue Date
- Feb-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Indium tin oxide; Zinc oxide; Electronic transport; Ohmic contact
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.2, pp.740 - 743
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 54
- Number
- 2
- Start Page
- 740
- End Page
- 743
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120709
- DOI
- 10.3938/jkps.54.740
- ISSN
- 0374-4884
- Abstract
- We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N(d) = 1.79 x 10(16) - 5.76 x 10(18) cm(-3)). For n-ZnO layers with carrier concentrations in excess of 8.04 x 10(17) cm-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than similar to 4 x 10(17) cm(-3) yield non-Ohmic behaviors. We show that when annealed at 400 degrees C in a nitrogen ambient; the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 x 10(17) cm(-3)) become Ohmic with a specific contact resistivity in the range of 8.76 x 10(-3) - 1.51 x 10(-4) Omega cm(2). Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms
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