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TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes
- Issue Date
- 26-1월-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- ageing; aluminium; annealing; contact resistance; gallium compounds; III-V semiconductors; light emitting diodes; ohmic contacts; secondary ion mass spectra; titanium compounds; wide band gap semiconductors; X-ray photoelectron spectra
- Citation
- APPLIED PHYSICS LETTERS, v.94, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 94
- Number
- 4
- ISSN
- 0003-6951
- Abstract
- We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0-7.2)x10(-4) Omega cm(2). However, annealing the samples at 300 degrees C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed.
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