Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN
- Authors
- Reddy, V. Rajagopal; Kim, Sang-Ho; Hong, Hyun-Gi; Yoon, Sang-Won; Ahn, Jae-Pyoung; Seong, Tae-Yeon
- Issue Date
- Jan-2009
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.20, no.1, pp.9 - 13
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Volume
- 20
- Number
- 1
- Start Page
- 9
- End Page
- 13
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120876
- DOI
- 10.1007/s10854-008-9586-4
- ISSN
- 0957-4522
- Abstract
- We report on the formation of thermally stable and low-resistance Ti/Au-based ohmic contacts to n-type GaN (4.0 x 10(18) cm(-3)) by using a W barrier layer. It is shown that the electrical characteristic of the sample is considerably improved upon annealing at 900 A degrees C for 1 min in a N-2 ambient. The contacts produce the specific contact resistance as low as 6.7 x 10(-6) Omega cm(2) after annealing. The Norde and current-voltage methods are used to determine the effective Schottky barrier heights (SBHs). It is shown that annealing results in a reduction in the SBHs as compared to that of the as-deposited sample. Auger electron spectroscopy (AES), scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) examinations show that nitride and gallide phases are formed at the contact/GaN interface. Based on the AES, STEM and XRD results, a possible ohmic formation mechanism is described and discussed.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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