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Electrical characterizations of Neutron-irradiated SiC Schottky diodes
- Authors
- Ko, Geunwoo; Kim, Hong-Yeol; Bang, Joona; Kim, Jihyun
- Issue Date
- 1월-2009
- Publisher
- KOREAN INSTITUTE CHEMICAL ENGINEERS
- Keywords
- Neutron Irradiation; Silicon Carbide; Diode
- Citation
- KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.26, no.1, pp.285 - 287
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- KOREAN JOURNAL OF CHEMICAL ENGINEERING
- Volume
- 26
- Number
- 1
- Start Page
- 285
- End Page
- 287
- ISSN
- 0256-1115
- Abstract
- Neutrons with an average energy of 9.8 +/- 0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75 x 10(11) neutron/cm(2), the Schottky barrier height, ideality factor, and the leakage Currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5 x 10(11) neutron/cm(2). In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75 x 10(11) neutron/cm(2).
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