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Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes
- Issue Date
- 2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- aluminium; annealing; electrical conductivity; elemental semiconductors; gallium compounds; III-V semiconductors; light emitting diodes; molecular beam epitaxial growth; ohmic contacts; passivation; photoluminescence; semiconductor-metal boundaries; silicon; titanium; wide band gap semiconductors; X-ray photoelectron spectra
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.7, pp.H275 - H277
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 12
- Number
- 7
- Start Page
- H275
- End Page
- H277
- ISSN
- 1099-0062
- Abstract
- We investigate the electrical properties of Ti/Al ohmic contacts on (NH(4))(2)S(x)-passivated N-face n-GaN:Si (4.2x10(18) cm(-3)) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300 degrees C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN.
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