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Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer
- Authors
- Jeong, Hwan Hee; Lee, Sang Youl; Song, June-O; Choi, Kwang Ki; Lee, Seok-Hun; Choi, Hee Seok; Oh, Tchang-Hun; Lee, Yong-Hyun; Seong, Tae-Yeon
- Issue Date
- 2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- electroplating; gallium compounds; III-V semiconductors; light emitting diodes; passivation
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.9, pp.H322 - H324
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 12
- Number
- 9
- Start Page
- H322
- End Page
- H324
- ISSN
- 1099-0062
- Abstract
- We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO(2) and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO(2) layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by similar to 20% at 100 mA) compared to LEDs with the SiO(2) layers.
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