Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer

Authors
Jeong, Hwan HeeLee, Sang YoulSong, June-OChoi, Kwang KiLee, Seok-HunChoi, Hee SeokOh, Tchang-HunLee, Yong-HyunSeong, Tae-Yeon
Issue Date
2009
Publisher
ELECTROCHEMICAL SOC INC
Keywords
electroplating; gallium compounds; III-V semiconductors; light emitting diodes; passivation
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.9, pp.H322 - H324
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
12
Number
9
Start Page
H322
End Page
H324
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120963
DOI
10.1149/1.3152334
ISSN
1099-0062
Abstract
We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO(2) and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO(2) layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by similar to 20% at 100 mA) compared to LEDs with the SiO(2) layers.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher SEONG, TAE YEON photo

SEONG, TAE YEON
College of Engineering (Department of Materials Science and Engineering)
Read more

Altmetrics

Total Views & Downloads

BROWSE