Grain-Boundary Conduction in Gadolinia-Doped Ceria: The Effect of SrO Addition
- Authors
- Cho, Pyeong-Seok; Cho, Yoon Ho; Park, Seung-Young; Lee, Sung Bo; Kim, Doh-Yeon; Park, Hyun-Min; Auchterlonie, Graeme; Drennan, John; Lee, Jong-Heun
- Issue Date
- 2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.3, pp.B339 - B344
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 156
- Number
- 3
- Start Page
- B339
- End Page
- B344
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122168
- DOI
- 10.1149/1.3046153
- ISSN
- 0013-4651
- Abstract
- This study examined the effect of adding SrO on the grain-boundary conduction of Ce0.9Gd0.1O1.95 (gadolinia-doped ceria) containing 500 ppm SiO2. The apparent grain-boundary resistivity at 300 degrees C decreased drastically from 746.7 to 0.90-1.97 k Omega cm upon doping with >= 1 mol % SrO, while the grain-interior resistivity increased gradually from 3.1 to 11.6 k Omega cm as the SrO concentration was increased up to 5 mol %. Therefore, doping with 1 mol % SrO resulted in the minimum total resistivity. The electron probe X-ray microanalysis and the analysis of the lattice parameters suggest that the 140-500-fold enhancement in the grain-boundary conduction is attributed to the scavenging of the highly resistive siliceous phase by the SrO-containing phase. (C) 2008 The Electrochemical Society.
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