The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers
- Authors
- Leem, Shi Jong; Shin, Young Chul; Kim, Kyoung Chan; Kim, Eun Hong; Sung, Yun Mo; Moon, Youngboo; Hwang, Sung Min; Kim, Tae Geun
- Issue Date
- 15-12월-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Stresses; Metalorganic chemical vapor deposition; Semiconducting III-V materials; Light emitting diodes
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.1, pp.103 - 106
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 1
- Start Page
- 103
- End Page
- 106
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122214
- DOI
- 10.1016/j.jcrysgro.2008.10.047
- ISSN
- 0022-0248
- Abstract
- We report on the effects of both a low-mole InGaN (LMI) structure and an InGaN/GaN strained layer superlattices (SLSs) structure as a buffer layer on the strain relaxation and the optical performance of an InGaN/GaN quantum well (QW) grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We investigated their structural and optical properties by varying the indium mole fraction, the thickness of InGaN, and the periodicity of the InGaN/GaN SLSs. We found that 300-angstrom-thick In0.03Ga0.97N LMI and 10 pair In0.1Ga0.9N/GaN (24/40 angstrom) SLSs were the optimal conditions to reduce the strain of an InGaN/GaN QW. The wavelength shift was reduced to as small as 7 nm for LEDs with In0.1Ga0.9N/GaN SLSs. We speculate that the reduction in the wavelength shift in the In0.1Ga0.9N/GaN SLSs LEDs resulted from the reduction of the strain in the MQW. (C) 2008 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
- College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.