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Carrier-Mediated Antiferromagnetic Interlayer Exchange Coupling in Diluted Magnetic Semiconductor Multilayers Ga(1-x)Mn(x)As/GaAs:Be

Authors
Chung, J. -H.Chung, S. J.Lee, SanghoonKirby, B. J.Borchers, J. A.Cho, Y. J.Liu, X.Furdyna, J. K.
Issue Date
5-12월-2008
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW LETTERS, v.101, no.23
Indexed
SCIE
SCOPUS
Journal Title
PHYSICAL REVIEW LETTERS
Volume
101
Number
23
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122235
DOI
10.1103/PhysRevLett.101.237202
ISSN
0031-9007
Abstract
We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga(0.97)Mn(0.03)As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.
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