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Low-Temperature Sintering and Microwave Dielectric Properties of V2O5-Added Zn2SiO4 Ceramics

Authors
Kim, Jin-SeongSong, Myung-EunJoung, Mi-RiChoi, Jae-HongNahm, SahnPaik, Jong-HooChoi, Byung-HyunLee, Hwack-Joo
Issue Date
Dec-2008
Publisher
WILEY-BLACKWELL
Citation
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.91, no.12, pp.4133 - 4136
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume
91
Number
12
Start Page
4133
End Page
4136
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122320
DOI
10.1111/j.1551-2916.2008.02785.x
ISSN
0002-7820
Abstract
V2O5 was added to ceramics of nominal composition Zn1.8SiO3.8 (ZS) in order to decrease their sintering temperature for application to low-temperature cofired ceramic devices. For the specimens sintered at 875 degrees C, a dense microstructure was developed when the V2O5 content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO2 and V2O5. The microwave dielectric properties of the ZS ceramics were influenced by the V2O5 content. Good microwave dielectric properties of Qxf=17 500 GHz, epsilon(r)=7.3, and tau(f)=-28 ppm/degrees C were obtained from the specimen containing 12.0 mol% V2O5 sintered at 875 degrees C for 2 h.
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