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Group III-nitride radial heterojunction nanowire light emitters
- Authors
- Mastro, Michael A.; Caldwell, Josh; Twigg, Mark; Simpkins, Blake; Glembocki, Orest; Holm, Ron T.; Eddy, Charles R., Jr.; Kub, Fritz; Kim, Hong-Yeol; Alin, Jaehui; Kim, Jihyun
- Issue Date
- Dec-2008
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- III-nitride; Nanowire; Defect
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.6, pp.584 - 587
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 9
- Number
- 6
- Start Page
- 584
- End Page
- 587
- ISSN
- 1229-9162
- Abstract
- Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
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